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Datasheet IDT6198S Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | IDT6198S | CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control ®
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control
IDT6198S IDT6198L
Integrated Device Technology, Inc.
FEATURES:
• High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added sy | Integrated Device Technology | cmos |
2 | IDT6198S15D | CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control ®
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control
IDT6198S IDT6198L
Integrated Device Technology, Inc.
FEATURES:
• High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added sy | Integrated Device Technology | cmos |
3 | IDT6198S15DB | CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control ®
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control
IDT6198S IDT6198L
Integrated Device Technology, Inc.
FEATURES:
• High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added sy | Integrated Device Technology | cmos |
4 | IDT6198S15L | CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control ®
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control
IDT6198S IDT6198L
Integrated Device Technology, Inc.
FEATURES:
• High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added sy | Integrated Device Technology | cmos |
5 | IDT6198S15LB | CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control ®
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control
IDT6198S IDT6198L
Integrated Device Technology, Inc.
FEATURES:
• High-speed (equal access and cycle times) — Military: 20/25/35/45/55/70/85ns (max.) — Commercial: 15/20/25/35ns (max.) • Output Enable (OE) pin available for added sy | Integrated Device Technology | cmos |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap Infineon Technologies AG diode | | |
4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
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