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Datasheet IDT5V9910A-2SOI Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IDT5V9910A-2SOI | 3.3V LOW SKEW PLL CLOCK DRIVER TURBOCLOCK JR IDT5V9910A 3.3V LOW SKEW PLL CLOCK DRIVER TURBOCLOCK JR.
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
3.3V LOW SKEW PLL CLOCK DRIVER TURBOCLOCK™ JR.
FEATURES:
• • • • • • Eight zero delay outputs <250ps of output to output skew Selectable positive or negative edge synchronization Syn |  Integrated Device | driver |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica  Infineon Technologies diode | | |
| 2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
| 3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap  Infineon Technologies AG diode | | |
| 4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
| 5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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