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Datasheet IDT5V926 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IDT5V926 | SINGLE OUTPUT CLOCK GENERATOR IDT5V2528/A 2.5 / 3.3V PHASE-LOCK LOOP CLOCK DRIVER
INDUSTRIAL TEMPERATURE RANGE
2.5V / 3.3V PHASE-LOCK LOOP CLOCK DRIVER ZERO DELAY BUFFER
FEATURES:
• • • •
IDT5V2528/A
• • • • • • •
Operates at 3.3V VDD/AVDD and 2.5V/3.3V VDDQ 1:10 fanout 3-level inputs for output contro |  Integrated Device | data |
| 2 | IDT5V926PGI | SINGLE OUTPUT CLOCK GENERATOR IDT5V926 SINGLE OUTPUT CLOCK GENERATOR
INDUSTRIAL TEMPERATURE RANGE
SINGLE OUTPUT CLOCK GENERATOR
IDT5V926
FEATURES:
• • • • • • • •
3V to 3.6V operating voltage 48MHz to 160MHz output frequency range Input from fundamental crystal oscillator or external source Internal PLL feed | Integrated Device | data |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica  Infineon Technologies diode | | |
| 2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
| 3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap  Infineon Technologies AG diode | | |
| 4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
| 5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
| Esta página es del resultado de búsqueda del IDT5V926. Si pulsa el resultado de búsqueda de IDT5V926 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
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| Número de pieza | Descripción | Fabricantes | |
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