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Datasheet IDT2309-1HPGG Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IDT2309-1HPGG | 3.3V ZERO DELAY CLOCK BUFFER IDT2309 3.3V ZERO DELAY CLOCK BUFFER
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
3.3V ZERO DELAY CLOCK BUFFER
FEATURES: DESCRIPTION:
IDT2309
• Phase-Lock Loop Clock Distribution • 10MHz to 133MHz operating frequency • Distributes one clock input to one bank of five and one bankd of four o |  Integrated Device | buffer |
| 2 | IDT2309-1HPGGI | 3.3V ZERO DELAY CLOCK BUFFER IDT2309 3.3V ZERO DELAY CLOCK BUFFER
COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
3.3V ZERO DELAY CLOCK BUFFER
FEATURES: DESCRIPTION:
IDT2309
• Phase-Lock Loop Clock Distribution • 10MHz to 133MHz operating frequency • Distributes one clock input to one bank of five and one bankd of four o | Integrated Device | buffer |
IDT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IDT02S60C | Schottky Diode IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica  Infineon Technologies diode | | |
| 2 | IDT03S60C | Schottky Diode IDT03S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • No reverse recovery/ no forward recovery • Temperature independent switching behavior • High surge current capability • Qualified according to JEDEC1) for target applica Infineon Technologies diode | | |
| 3 | IDT04S60C | 2nd Generation thinQ SiC Schottky Diode IDT04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current cap  Infineon Technologies AG diode | | |
| 4 | IDT05S60C | 2nd Generation thinQ SiC Schottky Diode IDT05S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current c Infineon Technologies AG diode | | |
| 5 | IDT06S60C | 2nd Generation thinQ SiC Schottky Diode IDT06S60C
2nd generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 6 | IDT08S60C | 2nd Generation thinQ SiC Schottky Diode IDT08S60C
2nd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current ca Infineon Technologies AG diode | | |
| 7 | IDT100494 | HIGH-SPEED BiCMOS ECL STATIC RAM 64K IDT cmos | |
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| Número de pieza | Descripción | Fabricantes | |
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