Datasheet ICE7N60FP Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
2	ICE7N60FP	N-Channel Enhancement Mode MOSFET ICE7N60FP N-Channel Enhancement Mode MOSFET ID V(BR)DSS rDS(ON) Qg Product Summary TA = 25°C ID = 250uA VGS = 10V VDS = 480V 7A 600V 0.52Ω 21nC Features: r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Cap	Micross Components
1	ICE7N60FP	N-Channel Enhancement Mode MOSFET ICE7N60FP ICE7N60FP N-Channel Enhancement Mode MOSFET Features • Low rDS(on) • Ultra Low Gate Charge • High dv/dt capability • High Unclamped Inductive Switching (UIS) capability • High peak current capability • Increased transconductance performance • Optimized design for high perfor	Icemos

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