No | Part number | Description ( Function ) | Manufacturers | |
1 | HN58C256AT-10 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) HN58C256A Series HN58C257A Series 256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58C257A) ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. They have realized high speed low power consumption and high reliability by employing advanced MNOS mem |
Hitachi Semiconductor |
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Recommended search results related to HN58C256AT-10 |
Part No | Description ( Function) | Manufacturers | |
HN58C256AT-85 | 256k EEPROM (32-kword x 8-bit) Ready/Busy and RES function (HN58C257A) HN58C256A Series HN58C257A Series 256k EEPROM (32-kword × 8-bit) Ready/Busy and RES function (HN58C257A) ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized as 32768-word × 8-bit. The |
Hitachi Semiconductor |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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