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HMJE13003T PDF Datasheet

The HMJE13003T is NPN Epitaxial Planar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 HMJE13003T
NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200211 Issued Date : 2000.08.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003T NPN EPITAXIAL PLANAR TRANSISTOR Description The HMJE13003T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
pdf

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Recommended search results related to HMJE13003T

Part No Description ( Function) Manufacturers PDF
HMJE13003   NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HT200210 Issued Date : 2001.01.01 Revised Date : 2002.05.08 Page No. : 1/3 HMJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
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HMJE13003D   NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200207 Issued Date : 1993.04.12 Revised Date : 2002.05.08 Page No. : 1/4 HMJE13003D NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Control

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics
datasheet pdf
13003   NPN Epitaxial Silicon Transistor

13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=1500mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage C

Elite Enterprises
Elite Enterprises
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13003   HIGH VOLTAGE AND HIGH SPEED SWITCH

13003 STANDARD · · 65 HSiN 13003 PEFORMANCE CURVES 1 Ic(A) SOA (DC) 120 100 % Pc Tj 0.1 80 IS/B 60 Ptot 0.01 40 20 0.001 1 hFE 10 100 Vce(V) 0 1000 0 50 100 150 Tj( ) 200 hFE - Ic 100 100 hFE hFE - Ic Tj=125 Tj=25 Tj=125 Tj=25 10 Tj= − 40

HSiN
HSiN
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13003ADA   NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers h

Unisonic Technologies
Unisonic Technologies
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