No | Part number | Description ( Function ) | Manufacturers | |
2 | HMC930 | GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER Amplifiers - Linear & Power - Chip Typical Applications The HMC930 is ideal for: • Test Instrumentation 3 • Microwave Radio & VSAT • Military & Space • Telecom Infrastructure • Fiber Optics Functional Diagram HMC930 v00.0610 GaAs pHEMT MMIC 0.25 WATT POWER AMPLIFIER, DC - 40 GHz Features High P1dB Output Power: 22 dBm High Psat Output Power: 24 dBm High Gain: 13 |
Analog Devices |
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1 | HMC930A | 0.25 W Power Amplifier Data Sheet GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz HMC930A FEATURES High output power for 1 dB compression (P1dB): 22 dBm High saturated output power (PSAT): 24 dBm High gain: 13 dB High output third-order intercept (IP3): 33.5 dBm Supply voltage: 10 V at 175 mA 50 Ω matched input/output Die size: 2.82 mm × 1.50 mm × 0.1 mm APPLICATIONS Test instrumentation |
Analog Devices |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |