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HMC632LP5E PDF Datasheet

The HMC632LP5E is Gaas Ingap Heterojunction Bipolar Transistor (hbt) MmIC Vco. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 HMC632LP5E
GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO

HMC632LP5 / 632LP5E v03.0811 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 14.25 - 15.65 GHz Typical Applications The HMC632LP5(E) is ideal for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram 8 Features Dual Output: Fo = 14.25 - 15.65 GHz Fo/2 = 7.125 - 7.825 GHz Pout: +9 dBm Phase Noise: -1

Hittite Microwave Corporation
Hittite Microwave Corporation
pdf

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Part No Description ( Function) Manufacturers PDF
HMC632LP5   GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO

HMC632LP5 / 632LP5E v03.0811 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 14.25 - 15.65 GHz Typical Applications The HMC632LP5(E) is ideal for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram 8

Hittite Microwave Corporation
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Microsemi
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DIGITRON SEMICONDUCTORS 1N6309 – 1N6355D 500 mW GLASS ZENER DIODES MAXIMUM RATINGS Rating Symbol Value Unit Junction and storage temperature range TJ, Tstg -65 to +175 °C Thermal resistance, junction to lead(1) 1N6309-1N6320 1N6321-1N6355 RӨJL 150 95.5 °C/W Th

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1N6325   Diode Zener Single 11V 5% 500mW 2-Pin DO-35

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