No | Part number | Description ( Function ) | Manufacturers | |
1 | HMC632LP5E | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO HMC632LP5 / 632LP5E v03.0811 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 14.25 - 15.65 GHz Typical Applications The HMC632LP5(E) is ideal for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram 8 Features Dual Output: Fo = 14.25 - 15.65 GHz Fo/2 = 7.125 - 7.825 GHz Pout: +9 dBm Phase Noise: -1 |
Hittite Microwave Corporation |
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Part No | Description ( Function) | Manufacturers | |
HMC632LP5 | GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO HMC632LP5 / 632LP5E v03.0811 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 14.25 - 15.65 GHz Typical Applications The HMC632LP5(E) is ideal for: • Point to Point/Multipoint Radio • Test Equipment & Industrial Controls • SATCOM • Military End-Use Functional Diagram 8 |
Hittite Microwave Corporation |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |