No | Part number | Description ( Function ) | Manufacturers | |
3 | HMC591 | GaAs PHEMT MMIC 2-Watt Power Amplifier HMC591 v01.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz 1 AMPLIFIERS - CHIP Typical Applications The HMC591 is ideal for use as a power amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Features Saturated Output Power: +34 dBm @ 24% PAE Output IP3: +43 dBm Gain: 23 dB DC Supply |
Hittite Microwave Corporation |
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2 | HMC591LP5 | high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz 5 AMPLIFIERS - SMT Typical Applications The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Features Saturated Output Power: +33 dBm @ 20% PAE Output IP3: +4 |
Hittite Microwave Corporation |
|
1 | HMC591LP5E | high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi HMC591LP5 / 591LP5E v02.0107 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 6.0 - 9.5 GHz 5 AMPLIFIERS - SMT Typical Applications The HMC591LP5 / HMC591LP5E is ideal for use as a power amplifier for: • Point-to-Point Radios • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Features Saturated Output Power: +33 dBm @ 20% PAE Output IP3: +4 |
Hittite Microwave Corporation |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |