No | Part number | Description ( Function ) | Manufacturers | |
2 | HMC415LP3 | GaAs InGaP HBT MMIC POWER AMPLIFIER v03.0605 HMC415LP3 / 415LP3E GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz LINEAR & POWER AMPLIFIERS - SMT 11 11 - 66 Typical Applications This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: • 802.11a WLAN • HiperLAN WLAN • Access Points • UNII & ISM Radios Functional Diagram Features Gain: 20 dB 34% PAE @ Psat = +26 dBm 3.7% E |
Hittite Microwave Corporation |
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1 | HMC415LP3E | GaAs InGaP HBT MMIC POWER AMPLIFIER v03.0605 HMC415LP3 / 415LP3E GaAs InGaP HBT MMIC POWER AMPLIFIER, 4.9 - 5.9 GHz LINEAR & POWER AMPLIFIERS - SMT 11 11 - 66 Typical Applications This amplifier is ideal for use as a power amplifier for 4.9 - 5.9 GHz applications: • 802.11a WLAN • HiperLAN WLAN • Access Points • UNII & ISM Radios Functional Diagram Features Gain: 20 dB 34% PAE @ Psat = +26 dBm 3.7% E |
Analog Devices |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |