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HM809 PDF Datasheet

The HM809 is Low-power MICroprocessor Reset Circuit Power Supply Monitoring. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 HM809
Low-power microprocessor reset circuit power supply monitoring

        概要 +0803/809/810 系列 低功耗微处理器电源监控复位电路 描述 HM803/809/810 系列电路是用来监测电源电压或电池电 压的微处理器复位电路。本系列电路不需要外围器件, 从而提高了系统的可靠性,降低了系统的成本。   本系列电路在被监测的电源电压低于预先设置的复位阈 值时

H&M Semiconductor
H&M Semiconductor
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Recommended search results related to HM809

Part No Description ( Function) Manufacturers PDF
0316809CT3C   IBM0316809CT3C

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IBM Microelectronics
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04980900ZXT   FUSE HOLDER

FUSIT Series: FH-04980900ZXT FUSE HOLDER FOR MIDI® /BF1 STYLE FUSE Dimensions Dimensions in mm (2) 3.81 M5 torque: 4-5Nm Description Use with BF1 /MIDI ® fuses up to 200A. Includes protective cover. Features interconnecting pins on side of fuse block for secure multiple blo

Fusit
Fusit
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0809LD120   120 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD120 120 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utiliz

GHZ Technology
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0809LD30   30 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD30 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes g

GHZ Technology
GHZ Technology
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0809LD30P   30 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD30P 30 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD30P is a common source N-Channel enhancement mode lateral MOSFET capable of providing 30 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utilizes

GHZ Technology
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