No | Part number | Description ( Function ) | Manufacturers | |
1 | HM628512BLRR-5SL | 4 M SRAM (512-kword x 8-bit) HM628512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The device, packaged in a 525-mil SOP (foot print pitch width) or 400-mil TSOP TYP |
Hitachi Semiconductor |
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Recommended search results related to HM628512BLRR-5SL |
Part No | Description ( Function) | Manufacturers | |
HM628512BLRR-5 | 4 M SRAM (512-kword x 8-bit) HM628512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS pr |
Hitachi Semiconductor |
|
HM628512BLRR-5UL | 4 M SRAM (512-kword x 8-bit) HM628512B Series 4 M SRAM (512-kword × 8-bit) ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS pr |
Hitachi Semiconductor |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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