Datasheet HM4 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
28	HM4-6514-B	1024 x 4 CMOS RAM HM-6514 March 1997 1024 x 4 CMOS RAM Description The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low power operation. On-chip latches are provided for addresses allowing efﬁc	Intersil Corporation
27	HM4-6516-9	2K x 8 CMOS RAM HM-6516 March 1997 2K x 8 CMOS RAM Description The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low power is further enhanced by the use of synchronous circuit techniques that keep the activ	Intersil Corporation
26	HM4-65162-9	2K x 8 Asynchronous CMOS Static RAM HM-65162 March 1997 2K x 8 Asynchronous CMOS Static RAM Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pi	Intersil Corporation
25	HM4-65162B-9	2K x 8 Asynchronous CMOS Static RAM HM-65162 March 1997 2K x 8 Asynchronous CMOS Static RAM Description The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V process. The device utilizes asynchronous circuit design for fast cycle time and ease of use. The pinout is the JEDEC 24 pi	Intersil Corporation

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Número de pieza	Descripción	Fabricantes	PDF
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