No | Part number | Description ( Function ) | Manufacturers | |
1 | HIP2123 | High Frequency Half-Bridge Drivers 100V, 2A Peak, High Frequency Half-Bridge Drivers with Rising Edge Delay Timer HIP2122, HIP2123 The HIP2122 and HIP2123 are 100V, high frequency, half-bridge MOSFET driver ICs. They are based on the popular ISL2100A and ISL2101A half-bridge drivers. Like the ISL2100A, two logic inputs, LI and HI, control both bridge outputs, LO and HO. All logic inputs are VDD tolerant. These d |
Intersil Corporation |
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Recommended search results related to HIP2123 |
Part No | Description ( Function) | Manufacturers | |
2SC2123 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2123 DESCRIPTION ·With TO-3 package ·Short switching times. ·High dielectric strength. APPLICATIONS ·For use in TV horizontal deflection stage PINNING(see fig.2) PIN 1 2 3 Ba |
SavantIC |
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2SD2123 | Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum |
Hitachi Semiconductor |
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2SD2123L | Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum |
Hitachi Semiconductor |
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2SD2123S | Silicon NPN Epitaxial 2SD2122(L)/(S), 2SD2123(L)/(S) Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SB1409(L)/(S) Outline DPAK 4 4 1 2 3 12 S Type 3 1. Base 2. Collector 3. Emitter 4. Collector L Type 2SD2122(L)/(S), 2SD2123(L)/(S) Absolute Maximum |
Hitachi Semiconductor |
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2SK2123 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs 2SK2123 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications 4.1±0.2 |
Panasonic Semiconductor |
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