No | Part number | Description ( Function ) | Manufacturers | |
1 | HGTG32N60E2 | 32A/ 600V N-Channel IGBT HGTG32N60E2 April 1995 32A, 600V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE Features • 32A, 600V • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar tran |
Intersil Corporation |
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Vishay |
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