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HGTG32N60E2 PDF Datasheet

The HGTG32N60E2 is 32a/ 600V N-channel Igbt. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 HGTG32N60E2
32A/ 600V N-Channel IGBT

HGTG32N60E2 April 1995 32A, 600V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE Features • 32A, 600V • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar tran

Intersil Corporation
Intersil Corporation
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