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Datasheet HGTG30N60C3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | HGTG30N60C3 | 63A/ 600V/ UFS Series N-Channel IGBT HGTG30N60C3
Data Sheet January 2000 File Number 4042.2
63A, 600V, UFS Series N-Channel IGBT
The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conductio |
 Intersil Corporation |
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| 2 | HGTG30N60C3D | 63A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes HGTG30N60C3D
Data Sheet January 2000 File Number 4041.2
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a |
Intersil Corporation |
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| 1 | HGTG30N60C3D | 63A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes HGTG30N60C3D
Data Sheet December 2001
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the lo |
 Fairchild Semiconductor |
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