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Datasheet HGTG30N60A4 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | HGTG30N60A4 | 600V/ SMPS Series N-Channel IGBT HGTG30N60A4
Data Sheet August 2003 File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss |
Fairchild Semiconductor |
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3 | HGTG30N60A4 | 600V/ SMPS Series N-Channel IGBT HGTG30N60A4
Data Sheet January 2000 File Number 4829
600V, SMPS Series N-Channel IGBT
The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction los |
Intersil Corporation |
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2 | HGTG30N60A4D | 600V/ SMPS Series N-Channel IGBT with HGTG30N60A4D
Data Sheet December 2001
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low o |
Fairchild Semiconductor |
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1 | HGTG30N60A4D | 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG30N60A4D
Data Sheet January 2000 File Number 4830
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSF |
Intersil Corporation |
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Número de pieza | Descripción | Fabricantes | |
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