No | Part number | Description ( Function ) | Manufacturers | |
1 | HGTG20N120E2 | 34A/ 1200V N-Channel IGBT Semiconductor HGTG20N120E2 34A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) April 1995 Features • 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features o |
Intersil Corporation |
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Recommended search results related to HGTG20N120E2 |
Part No | Description ( Function) | Manufacturers | |
HGTG20N120 | 34A/ 1200V N-Channel IGBT Semiconductor HGTG20N120E2 34A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) April 1995 Features • 34A, 1200V • Latch Free Operation • Typical Fall Time - 780ns • High Input Impedance • Low Conduction Loss Desc |
Intersil Corporation |
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HGTG20N120C3D | 45A/ 1200V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG20N120C3D Data Sheet October 1998 File Number 4508.1 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the hi |
Intersil Corporation |
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HGTG20N120CN | 63A/ 1200V/ NPT Series N-Channel IGBT HGTG20N120CN Data Sheet January 2000 File Number 4533.2 63A, 1200V, NPT Series N-Channel IGBT The HGTG20N120CN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipol |
Intersil Corporation |
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HGTG20N120CND | 63A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG20N120CND Data Sheet January 2000 File Number 4535.2 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine t |
Intersil Corporation |
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PXAC201202FC | Thermally-Enhanced High Power RF LDMOS FET PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design |
Infineon |
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1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
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