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HGTG12N60D1 PDF Datasheet

The HGTG12N60D1 is 12a/ 600V N-channel Igbt With Anti-parallel Ultrafast Diode. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
2 HGTG12N60D1
12A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE Features • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device co

Intersil Corporation
Intersil Corporation
pdf
1 HGTG12N60D1D
12A/ 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode

HGTG12N60D1D April 1995 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package JEDEC STYLE TO-247 EMITTER COLLECTOR COLLECTOR (BOTTOM SIDE METAL) GATE Features • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device co

Intersil Corporation
Intersil Corporation
pdf

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