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Datasheet HGTG12N60C3D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | HGTG12N60C3D | N-Channel IGBT Data Sheet
HGTG12N60C3D
December 2001
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the lo |
 Fairchild Semiconductor |
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| 2 | HGTG12N60C3D | 24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode HGTG12N60C3D
Data Sheet January 2000 File Number 4043.2
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a |
 Intersil Corporation |
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| 1 | HGTG12N60C3D | UFS Series N-Channel IGBT S E M I C O N D U C T O R
HGTG12N60C3D
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
Package
JEDEC STYLE TO-247
E C G
January 1997
Features
• • • • • 24A, 600V at TC = 25 C Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC Short Circuit Rating L |
 Harris Corporation |
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