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Datasheet HGT1S3N60C3DS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | HGT1S3N60C3DS | 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
January 1997
Features
• 6A, 600V at TC = 25oC • 600V Switching SOA Capability • Typic |
 Fairchild Semiconductor |
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| 2 | HGT1S3N60C3DS | 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes HGTP3N60C3D, HGT1S3N60C3DS
Data Sheet January 2000 File Number 4140.2
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGTP3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices |
 Intersil Corporation |
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| 1 | HGT1S3N60C3DS | UFS Series N-Channel IGBT S E M I C O N D U C T O R
HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS
6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
Packaging
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
January 1997
Features
• 6A, 600V at TC = 25oC • 600V Switching SOA |
 Harris Corporation |
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