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Datasheet HGT1S20N35G3VLS Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | HGT1S20N35G3VLS | 20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
December 2001
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
• Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition |
 Fairchild Semiconductor |
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| 1 | HGT1S20N35G3VLS | 20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs HGTP20N35G3VL, HGT1S20N35G3VL, HGT1S20N35G3VLS
April 1995
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
Packages
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
• Logic Level Gate Drive • Internal Voltage Clamp • ESD Gate Protection • TJ = 175oC • Ignition En |
 Intersil Corporation |
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