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HGT PDF Datasheet

The HGT is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
289 HGT1N30N60A4D
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state

Fairchild Semiconductor
Fairchild Semiconductor
pdf
288 HGT1N40N60A4
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGT1N40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

Fairchild Semiconductor
Fairchild Semiconductor
pdf
287 HGT1N40N60A4D
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

HGT1N40N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

Fairchild Semiconductor
Fairchild Semiconductor
pdf
286 HGT1S10N120BNS
35A/ 1200V/ NPT Series N-Channel IGBT

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance

Fairchild Semiconductor
Fairchild Semiconductor
pdf
285 HGT1S10N120BNS
35A/ 1200V/ NPT Series N-Channel IGBT

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 File Number 4575.2 35A, 1200V, NPT Series N-Channel IGBT The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the h

Intersil Corporation
Intersil Corporation
pdf
284 HGT1S11N120CNS
43A/ 1200V/ NPT Series N-Channel IGBT

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedan

Fairchild Semiconductor
Fairchild Semiconductor
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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