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Datasheet HFW10N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | HFW10N60 | N-Channel MOSFET HFW10N60
Sep 2009
HFW10N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ = 0.64 Ω ID = 9.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled |
 SemiHow |
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| 2 | HFW10N60S | N-Channel MOSFET HFW10N60S
May 2010
HFW10N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 9.5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gat |
SemiHow |
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| 1 | HFW10N60U | N-Channel MOSFET HFW10N60U_HFI10N60U
HFW10N60U / HFI10N60U
600V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended S |
SemiHow |
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