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HFP80N75 PDF Datasheet

The HFP80N75 is N-channel Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 HFP80N75
N-Channel Enhancement Mode Field Effect Transistor

Shantou Huashan Electronic Devices Co.,Ltd. HFP80N75 N-Channel Enhancement Mode Field Effect Transistor █ Applications • Servo motor control. • Power MOSFET gate drivers. • DC/DC converters • Other switching applications. █ Features • 80A, 75V(See Note), RDS(on) <11mVΩ@VGS = 10 V • Fast switching • 100% avalanche tested • Minimize input capacitance and

HUASHAN ELECTRONIC
HUASHAN ELECTRONIC
pdf

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2KG028075YQ 2KG028075YQ SWITCHING DIODE CHIPS DESCRIPTION Ø 2KG028075YQ is a high speed switching diode chip fabricated in planar technology. Ø Ø This chip can be encapsulated as 1N4148 switching diode. When the chip is selected glass package, the chip thickness is 120µm, and

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D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise spe

Advanced Power Technology
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APT8075   Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

D TO-247 G S APT8075BN 800V ® 13.0A 0.75Ω 12.0A 0.90Ω POWER MOS IV MAXIMUM RATINGS Symbol V DSS ID IDM V GS PD TJ,TSTG TL Parameter Drain-Source Voltage APT8090BN 800V N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise spe

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[1]    

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