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Datasheet HFP7N80 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | HFP7N80 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co., Ltd.
HFP7N80
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially |
HUASHAN ELECTRONIC |
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1 | HFP7N80 | N-Channel MOSFET HFP7N80
June 2005
HFP7N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 7.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate C |
SemiHow |
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