Datasheet HFP630A Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HFP630A	200V N-Channel MOSFET HFP630A Jan 2016 HFP630A 200V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12 nC (Typ.) Extended Safe Operating Ar	SemiHow

HFP6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HFP640	200V N-Channel MOSFET HFP640 July 2005 HFP640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics	SemiHow
HFP640	N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd. HFP640 N-Channel Enhancement Mode Field Effect Transistor █ General Description These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay	Shantou Huashan
HFP640G	N-Channel MOSFET HFP640G Feb 2015 HFP640G 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 18 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics	SemiHow

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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