No | Part number | Description ( Function ) | Manufacturers | |
3 | HFP630 | N-Channel Enhancement Mode Field Effect Transistor Tstg Tj VD S S VDGR VG S ID PD Ta=25 (RGS=1M ) Tc=25 T c =25 Ta=25 N-Channel Enhancement Mode Field Effect Transistor HFP630 TO-220 55~150 55~150 200V 500V ±3 0 V 9 . 0A 72W 1G 2D 3S µ ± µ ±3 µ |
Shantou Huashan |
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2 | HFP630 | 200V N-Channel MOSFET HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.34 ȍ (Typ |
SemiHow |
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1 | HFP630A | 200V N-Channel MOSFET HFP630A Jan 2016 HFP630A 200V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 12 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7S#9GS=10V 100% Avalanche Tested BVDSS = |
SemiHow |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |