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Datasheet HFP5N80 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | HFP5N80 | N-Channel MOSFET HFP5N80
May 2013
HFP5N80
800V N-Channel MOSFET
BVDSS = 800 V RDS(on) typ ȍ ID = 5.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Cha |
SemiHow |
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1 | HFP5N80 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd.
HFP5N80
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially t |
HUASHAN ELECTRONIC |
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