No | Part number | Description ( Function ) | Manufacturers | |
3 | HFP13N50 | N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd. HFP13N50 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance |
HUASHAN ELECTRONIC |
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2 | HFP13N50S | N-Channel MOSFET HFP13N50S March 2014 HFP13N50S 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ ȍ ID = 13 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) |
SemiHow |
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1 | HFP13N50U | N-Channel MOSFET HFP13N50U HFP13N50U 500V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 34 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.39 ȍ7S#9GS=10V 100% Avalanche Tested Nov 2013 BVDSS |
SemiHow |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |