No | Part number | Description ( Function ) | Manufacturers | |
1 | HFP10N65U | N-Channel MOSFET HFP10N65U HFP10N65U 650V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.8 ȍ7S#9GS=10V 100% Avalanche Tested March 2013 BVDSS |
SemiHow |
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Vishay |
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ON Semiconductor |
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