Datasheet HFH7N60 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HFH7N60	N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd. HFH7N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially t	HUASHAN ELECTRONIC

HFH7 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HFH7N80	N-Channel MOSFET HFH7N80 Mar 2010 HFH7N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 1.55 ȍ ID = 7.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics	SemiHow
HFH7N60	N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd. HFH7N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology h	HUASHAN ELECTRONIC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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