Datasheet HFF640 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HFF640	N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF640 APPLICATIONSL High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VDGR Drain-Gate Vol	HUASHAN ELECTRONIC

HFF Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HFF2N60	N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF2N60 APPLICATIONSL High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VGSS Gate-Sour	HUASHAN ELECTRONIC
HFF5N60	N-Channel Enhancement Mode Field Effect Transistor Shantou Huashan Electronic Devices Co.,Ltd. HFF5N60 N-Channel Enhancement Mode Field Effect Transistor █ General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology h	HUASHAN ELECTRONIC
HFF640	N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF640 APPLICATIONSL High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage	HUASHAN ELECTRONIC

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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