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Datasheet HFD1N65S Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 HFD1N65S   N-Channel MOSFET

HFD1N65S / HFU1N65S HFD1N65S / HFU1N65S 650V N-Channel MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 3.0 nC (Typ.)  Exte
 SemiHow
SemiHow		 datasheet HFD1N65S pdf

HFD1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
HFD1N65

N-Channel MOSFET

HFD1N65 / HFU1N65 April 2006 HFD1N65 / HFU1N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 10.5 Ω ID = 0.8 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent
 SemiHow
SemiHow		 datasheet pdf - SemiHow
HFD1N80

N-Channel MOSFET

HFD1N80 / HFU1N80 April 2006 HFD1N80 / HFU1N80 800V N-Channel MOSFET BVDSS = 800 V RDS(on) typ = 13 Ω ID = 1.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Sw
 SemiHow
SemiHow		 datasheet pdf - SemiHow
HFD1N70

N-Channel MOSFET

HFD1N70 / HFU1N70 Dec 2008 HFD1N70 / HFU1N70 700V N-Channel MOSFET BVDSS = 700 V RDS(on) typ = 14.0 Ω ID = 0.8 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Sw
 SemiHow
SemiHow		 datasheet pdf - SemiHow


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Número de pieza Descripción Fabricantes PDF
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