No | Part number | Description ( Function ) | Manufacturers | |
1 | HFA40HF120C | Soft Recovery Diode PD-91797 PRELIMINARY HFA40HF120C Ultrafast, Soft Recovery Diode VR = 1200V VF = 4.46V Qrr = 370nC HEXFRED Features TM (ISOLATED BASE) • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount ANODE COMMON CATHODE ANODE di(rec)M/dt = 380A/µs Description HEXFRED diodes are optimized to reduce losses |
International Rectifier |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to HFA40HF120C |
Part No | Description ( Function) | Manufacturers | |
HFA40HF120 | Soft Recovery Diode PD-20376 HFA40HF120 HEXFRED Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount CATHODE ANODE TM Ultrafast, Soft Recovery Diode (ISOLATED BASE) VR = 1200V VF = 3.1V Qrr |
International Rectifier |
|
C2M0040120D | Silicon Carbide Power MOSFET VDS 1200 V C2M0040120D Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 60 A RDS(on) 40 mΩ N-Channel Enhancement Mode Features Package • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances |
Cree |
|
C4D40120D | Silicon Carbide Schottky Diode C4D40120D–Silicon Carbide Schottky Diode Z-Rec™ Rectifier Features VRRM = IF; TC<135˚C 1200 V = 54 A 260 nC Qc = Package • • • • • 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switchi |
Cree |
|
CBD40120LCT | Low VF Schottky Rectifier datasheet39.com CBD40120LCT LOW VF SCHOTTKY RECTIFIER VOLTAGE FEATURES • Low forward voltage drop, low power losses 0.624(15.87) 120 Volts CURRENT 40 Amperes 0.419(10.66) 0.387(9.85) 0.139(3.55) MIN. 0.196(5.00) 0.163(4.16) 0.054(1.39) 0.045(1.15) • High efficiency o |
PanJit International |
|
CGH40120F | RF Power GaN HEMT CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEM |
CREE |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |