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HF75-28F PDF Datasheet

The HF75-28F is NPN SilICon Rf Power Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 HF75-28F
NPN SILICON RF POWER TRANSISTOR

HF75-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF75-28F is Designed for B .112 x 45° A PACKAGE STYLE .380 4L FLG FEATURES: • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System E B C D F E C E Ø.125 NOM. FULL R J .125 G H I MAXIMUM RATINGS IC VCB VCE PDISS TJ T STG θ JC O 10 A 60 V 35 V 140 W @ T

Advanced Semiconductor
Advanced Semiconductor
pdf

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Recommended search results related to HF75-28F

Part No Description ( Function) Manufacturers PDF
HF75-28S   NPN SILICON RF POWER TRANSISTOR

HF75-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF75-28S is Designed for PACKAGE STYLE .380 STUD .112x45° A B C E ØC FEATURES: • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System E B H I J D #8-32 UN

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a FEATURES On-Chip Latches for Both DACs +5 V to +15 V Operation DACs Matched to 1% Four Quadrant Multiplication TTL/CMOS Compatible Latch Free (Protection Schottkys not Required) APPLICATIONS Digital Control of: Gain/Attenuation Filter Parameters Stereo Audio Circuits X-Y Graphi

Analog Devices
Analog Devices
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AON7528   30V N-Channel AlphaMOS

AON7528 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS ( αMOS LV) technology • Very Low RDS(on) at 4.5V GS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS

Freescale
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AON7528   30V N-Channel AlphaMOS

AON7528 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Product Summary V DS ID (at VGS=10V) 30V 50A < 2mΩ < 3.4mΩ HB

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