Datasheet HE8812SG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HE8812SG	GaAlAs Infrared Emitting Diode HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan. 2003 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.	Hitachi Semiconductor

HE881 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HE8812SG	GaAlAs Infrared Emitting Diode HE8812SG GaAlAs Infrared Emitting Diode ODE-208-1000A (Z) Rev.1 Jan. 2003 Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and	Hitachi Semiconductor
HE8811	GaAlAs Infrared Emitting Diode HE8811 GaAlAs Infrared Emitting Diode ODE-208-999B (Z) Rev.2 Mar. 2005 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light s	Hitachi

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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