Datasheet HAT2215RJ Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	HAT2215RJ	Silicon N Channel Power MOS FET High Speed Power Switching HAT2215R, HAT2215RJ Silicon N Channel Power MOS FET High Speed Power Switching REJ03G0486-0300 Rev.3.00 Dec.22.2004 Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting Outline SOP-8 7 8 D D 5 6 D D 8 2 G 4 G 3 1 2 5 7 6 4 1, 3 Source 2, 4	Renesas Technology

HAT221 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
HAT2215R	Silicon N Channel Power MOS FET High Speed Power Switching HAT2215R, HAT2215RJ Silicon N Channel Power MOS FET High Speed Power Switching REJ03G0486-0300 Rev.3.00 Dec.22.2004 Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting Outline SOP-8 7 8 D D 5 6 D D 8 2 G 4 G 3 1 2 5 7 6	Renesas Technology
HAT2215RJ	Silicon N Channel Power MOS FET High Speed Power Switching HAT2215R, HAT2215RJ Silicon N Channel Power MOS FET High Speed Power Switching REJ03G0486-0300 Rev.3.00 Dec.22.2004 Features • Low on-resistance • Capable of 4.5 V gate drive • High density mounting Outline SOP-8 7 8 D D 5 6 D D 8 2 G 4 G 3 1 2 5 7 6	Renesas Technology
HAT2210R	Silicon N Channel Power MOS FET HAT2210R, HAT2210RJ Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G0578-0300 Rev.3.00 Mar.15.2005 Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Bar	Renesas Technology

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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