No | Part number | Description ( Function ) | Manufacturers | |
1 | HAT2210RJ | Silicon N Channel Power MOS FET
HAT2210R, HAT2210RJ
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
REJ03G0578-0300 Rev.3.00 Mar.15.2005
Features
• • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PRSP0008DD-A (Package name: SOP-8 |
Renesas Technology |
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