No | Part number | Description ( Function ) | Manufacturers | |
2 | HAT2210R | Silicon N Channel Power MOS FET
HAT2210R, HAT2210RJ
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
REJ03G0578-0300 Rev.3.00 Mar.15.2005
Features
• • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PRSP0008DD-A (Package name: SOP-8 |
Renesas Technology |
|
1 | HAT2210RJ | Silicon N Channel Power MOS FET
HAT2210R, HAT2210RJ
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
REJ03G0578-0300 Rev.3.00 Mar.15.2005
Features
• • • • Low on-resistance Capable of 4.5 V gate drive High density mounting Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PRSP0008DD-A (Package name: SOP-8 |
Renesas Technology |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |