No | Part number | Description ( Function ) | Manufacturers | |
1 | HAT1020R | Silicon P Channel Power MOS FET High Speed Power Switching HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H (Z) 9th. Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1020R Absolute Maximum Ratings (Ta = 25°C) |
Hitachi Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to HAT1020R |
Part No | Description ( Function) | Manufacturers | |
HAT1020 | Silicon P Channel Power MOS FET High Speed Power Switching HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H (Z) 9th. Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G |
Hitachi Semiconductor |
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2SA1020 | TRANSISTOR (POWER AMPLIFIER APPLICATIONS) 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary |
Toshiba Semiconductor |
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2SA1020 | TO-92MOD Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1020 FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating an |
ETC |
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2SA1020 | PNP EPITAXIAL SILICON TRANSISTOR UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: t |
Unisonic Technologies |
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2SA1020 | One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE 2SA1020 Preferred Device One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power D |
ON Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |