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HAT1020R PDF Datasheet

The HAT1020R is SilICon P Channel Power Mos Fet High Speed Power Switching. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 HAT1020R
Silicon P Channel Power MOS FET High Speed Power Switching

HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H (Z) 9th. Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 HAT1020R Absolute Maximum Ratings (Ta = 25°C)

Hitachi Semiconductor
Hitachi Semiconductor
pdf

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Recommended search results related to HAT1020R

Part No Description ( Function) Manufacturers PDF
HAT1020   Silicon P Channel Power MOS FET High Speed Power Switching

HAT1020R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-435 H (Z) 9th. Edition February 1999 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 5 6 7 8 D D D D 3 1 2 4 4 G

Hitachi Semiconductor
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2SA1020   TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary

Toshiba Semiconductor
Toshiba Semiconductor
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2SA1020   TO-92MOD Plastic-Encapsulated Transistors

Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1020 FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating an

ETC
ETC
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2SA1020   PNP EPITAXIAL SILICON TRANSISTOR

UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: t

Unisonic Technologies
Unisonic Technologies
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2SA1020   One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE

2SA1020 Preferred Device One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power D

ON Semiconductor
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[1]    

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Vishay Semiconductor
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This is a popular adjustable voltage regulator.
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On Semiconductor
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