Datasheet H7P0601DS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	H7P0601DS	Silicon P Channel MOS FET High Speed Power Switching H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 Features • Low on-resistance RDS(on) = 40 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2	Renesas Technology

H7P060 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
H7P0601DL	Silicon P Channel MOS FET High Speed Power Switching H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 Features • Low on-resistance RDS(on) = 40 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline DPAK-2	Renesas Technology
H7P0601DS	Silicon P Channel MOS FET High Speed Power Switching H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 Features • Low on-resistance RDS(on) = 40 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline DPAK-2	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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