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H7N1002LM PDF Datasheet

The H7N1002LM is SilICon N Channel Mos Fet High Speed Power Switching. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 H7N1002LM
Silicon N Channel MOS FET High Speed Power Switching

H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. So

Renesas Technology
Renesas Technology
pdf

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Recommended search results related to H7N1002LM

Part No Description ( Function) Manufacturers PDF
H7N1002AB   Silicon N Channel MOS FET High Speed Power Switching

H7N1002AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0130-0200Z Rev.2.00 Oct.30.2003 Features • Low on-resistance RDS(on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Dr

Renesas Technology
Renesas Technology
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H7N1002LD   Silicon N Channel MOS FET High Speed Power Switching

H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate dri

Renesas Technology
Renesas Technology
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H7N1002LS   Silicon N Channel MOS FET High Speed Power Switching

H7N1002LD, H7N1002LS, H7N1002LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1131-0700 (Previous: ADE-208-1573E) Rev.7.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 8 mΩ typ. • Low drive current • Available for 4.5 V gate dri

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