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Datasheet H7N0608L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | H7N0608L | Silicon N Channel MOS FET High Speed Power Switching
H7N0608LD, H7N0608LS, H7N0608LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0144-0100Z Rev.1.00 Oct.30.2003
Features
• Low on-resistance RDS(on) = 6.0 mΩ typ. • Low drive current • Available for 4.5 V gate drive
Outline
LDPAK
D
4
4
4
G 1 S
1
2
1 |
 Renesas Technology |
 |
| 3 | H7N0608LD | Silicon N Channel MOS FET High Speed Power Switching
H7N0608LD, H7N0608LS, H7N0608LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0144-0100Z Rev.1.00 Oct.30.2003
Features
• Low on-resistance RDS(on) = 6.0 mΩ typ. • Low drive current • Available for 4.5 V gate drive
Outline
LDPAK
D
4
4
4
G 1 S
1
2
1 |
Renesas Technology |
|
| 2 | H7N0608LM | Silicon N Channel MOS FET High Speed Power Switching
H7N0608LD, H7N0608LS, H7N0608LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0144-0100Z Rev.1.00 Oct.30.2003
Features
• Low on-resistance RDS(on) = 6.0 mΩ typ. • Low drive current • Available for 4.5 V gate drive
Outline
LDPAK
D
4
4
4
G 1 S
1
2
1 |
Renesas Technology |
|
| 1 | H7N0608LS | Silicon N Channel MOS FET High Speed Power Switching
H7N0608LD, H7N0608LS, H7N0608LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0144-0100Z Rev.1.00 Oct.30.2003
Features
• Low on-resistance RDS(on) = 6.0 mΩ typ. • Low drive current • Available for 4.5 V gate drive
Outline
LDPAK
D
4
4
4
G 1 S
1
2
1 |
Renesas Technology |
|
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| Número de pieza | Descripción | Fabricantes | |
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