|
|
Datasheet H7N0607DL Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | H7N0607DL | Silicon N Channel MOS FET High Speed Power Switching H7N0607DL, H7N0607DS
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0124-0300 Rev.3.00 Jan.27.2005
Features
• Low on-resistance RDS(on) = 26 mΩ typ. • Low drive current. • Capable of 4.5 V gate drive
Outline
PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)- |
Renesas Technology |
H7N060 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
H7N0607DS | Silicon N Channel MOS FET High Speed Power Switching |
Renesas Technology |
|
H7N0602LS | Silicon N Channel MOS FET High Speed Power Switching |
Renesas Technology |
|
H7N0608FM | Silicon N Channel MOS FET High Speed Power Switching |
Renesas Technology |
Esta página es del resultado de búsqueda del H7N0607DL. Si pulsa el resultado de búsqueda de H7N0607DL se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |