No | Part number | Description ( Function ) | Manufacturers | |
1 | H7N0602LS | Silicon N Channel MOS FET High Speed Power Switching H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1130-0600 Rev.6.00 Oct 16, 2006 Features • Low on-resistance RDS (on) = 4.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 RE |
Renesas Technology |
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Recommended search results related to H7N0602LS |
Part No | Description ( Function) | Manufacturers | |
H7N0602AB | Silicon N Channel MOS FET High Speed Power Switching H7N0602AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0068-0200Z Rev.2.00 Oct.30.2003 Features • Low on-resistance RDS(on) = 4.1 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. |
Renesas Technology |
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H7N0602LD | Silicon N Channel MOS FET High Speed Power Switching H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1130-0600 Rev.6.00 Oct 16, 2006 Features • Low on-resistance RDS (on) = 4.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching Outline RENESAS Package c |
Renesas Technology |
|
H7N0602LM | Silicon N Channel MOS FET High Speed Power Switching H7N0602LD, H7N0602LS, H7N0602LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1130-0600 Rev.6.00 Oct 16, 2006 Features • Low on-resistance RDS (on) = 4.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switching Outline RENESAS Package c |
Renesas Technology |
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Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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ON Semiconductor |
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