No | Part number | Description ( Function ) | Manufacturers | |
1 | H7N0311LD | Silicon N Channel MOS FET High Speed Power Switching H7N0311LD, H7N0311LS, H7N0311LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1126-0500 (Previous: ADE-208-1423C) Rev.5.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 7.0 mΩ typ. • Low drive current Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package co |
Renesas Technology |
0  1  2  3  4  5  6  7  8 9 |
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H7N0311LM | Silicon N Channel MOS FET High Speed Power Switching H7N0311LD, H7N0311LS, H7N0311LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1126-0500 (Previous: ADE-208-1423C) Rev.5.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 7.0 mΩ typ. • Low drive current Outline RENESAS Package code: |
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H7N0311LS | Silicon N Channel MOS FET High Speed Power Switching H7N0311LD, H7N0311LS, H7N0311LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1126-0500 (Previous: ADE-208-1423C) Rev.5.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 7.0 mΩ typ. • Low drive current Outline RENESAS Package code: |
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UPD703116 | 32-Bit Single-Chip Microcontrollers User’s Manual V850E/IA1 32-Bit Single-Chip Microcontrollers Hardware µPD703116 µPD703116(A) µPD703116(A1) µPD70F3116 µPD70F3116(A) µPD70F3116(A1) Document No. U14492EJ4V1UD00 (4th edition) Date Published April 2004 N CP(K) 1999, 2002 Printed in Japan [MEMO] 2 User |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |