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Datasheet H7N0308AB Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | H7N0308AB | Silicon N Channel MOS FET High Speed Power Switching H7N0308AB
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 3.8 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
123
G
D S
REJ03G1122-0400 (P |
Renesas Technology |
H7N030 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
H7N0307AB | Silicon N Channel MOS FET High Speed Power Switching |
Hitachi |
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H7N0307L | Silicon N Channel MOS FET High Speed Power Switching |
Hitachi |
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H7N0308AB | Silicon N Channel MOS FET High Speed Power Switching |
Renesas Technology |
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Número de pieza | Descripción | Fabricantes | |
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