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Datasheet H7N0307LM Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | H7N0307LM | Silicon N Channel MOS FET H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1121-0700 (Previous: ADE-208-1516E)
Rev.7.00 Apr 07, 2006
Features
• Low on-resistance RDS (on) = 4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RE |
 Renesas |
 |
| 1 | H7N0307LM | Silicon N Channel MOS FET High Speed Power Switching H7N0307LD, H7N0307LS, H7N0307LM
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1516D (Z)
5th. Edition May 2002
Features
• Low on-resistance RDS(on) =4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
LDPAK
D G
S
4 44
1 2 3
1 2 |
 Hitachi |
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